N沟道MOSFET QFET 600 V ， 2.8 A， 2.5欧姆 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
• 2.8A, 600V, RDSon= 2.5Ω@VGS= 10 V
• Low gate charge typical 15 nC
• Low Crss typical 6.5 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 600 V
额定电流 5.00 A
漏源极电阻 2.00 Ω
极性 N-Channel
耗散功率 2.5 W
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 2.80 A
上升时间 42 ns
输入电容Ciss 670pF @25VVds
额定功率Max 2.5 W
下降时间 46 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 49W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
高度 6.1 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 Non-Compliant
含铅标准 Lead Free
ECCN代码 EAR99