FAIRCHILD SEMICONDUCTOR FQPF5N60C 功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2.5 ohm, 10 V, 4 V
The is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
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- Low gate charge
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- 100% Avalanche tested
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- Improved system reliability in PFC and soft switching topologies
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- Switching loss improvements
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- Lower conduction loss
额定电压DC 600 V
额定电流 4.50 A
针脚数 3
漏源极电阻 2.5 Ω
极性 N-Channel
耗散功率 33 W
阈值电压 4 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 4.50 A
上升时间 42 ns
输入电容Ciss 670pF @25VVds
额定功率Max 33 W
下降时间 46 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 33W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
制造应用 Power Management, Lighting
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQPF5N60C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP4NK60ZFP 意法半导体 | 功能相似 | FQPF5N60C和STP4NK60ZFP的区别 |
STD18N55M5 意法半导体 | 功能相似 | FQPF5N60C和STD18N55M5的区别 |
SPP08N80C3 英飞凌 | 功能相似 | FQPF5N60C和SPP08N80C3的区别 |