FDS8882

FAIRCHILD SEMICONDUCTOR  FDS8882  晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V

General Description

The has been designed to minimize losses in power conversion application. Advancements in both  silicon and package technologies have been combined to offer the lowest rDSonwhile maintaining excellent switching performance.

Features

„Max rDSon =20.0 mΩat VGS = 10 V, ID= 9 A

„Max rDSon =22.5 mΩat VGS = 4.5 V, ID= 8 A

„High performance trench technology for extremely low rDSon and fast switching

„High power and current handling capability

„Termination is Lead-free and RoHS Compliant

Applications

„Notebook System Regulators

„DC/DC Converters