FAIRCHILD SEMICONDUCTOR FQD16N25CTM 场效应管, MOSFET, N沟道, 250V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- 100% Avalanche tested
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- 41nC Typical low gate charge
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- 68pF Typical low Crss
额定电压DC 250 V
额定电流 16.0 A
针脚数 3
漏源极电阻 220 mΩ
极性 N-Channel
耗散功率 160 W
阈值电压 4 V
漏源极电压Vds 250 V
漏源击穿电压 250 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 16.0 A
上升时间 130 ns
输入电容Ciss 1080pF @25VVds
额定功率Max 160 W
下降时间 105 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 160 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.6 mm
宽度 6.1 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQD16N25CTM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQD16N25CTM_F080 飞兆/仙童 | 类似代替 | FQD16N25CTM和FQD16N25CTM_F080的区别 |
MTD6N20ET4G 安森美 | 功能相似 | FQD16N25CTM和MTD6N20ET4G的区别 |
IRLR024TRPBF 威世 | 功能相似 | FQD16N25CTM和IRLR024TRPBF的区别 |