FAIRCHILD SEMICONDUCTOR FQP17P10 晶体管, MOSFET, P沟道, 16.5 A, -100 V, 190 mohm, -10 V, -4 V
The is a QFET® P-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 30nC Typical low gate charge
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- 100pF Typical low Crss
额定电压DC -100 V
额定电流 -16.5 A
针脚数 3
漏源极电阻 190 mΩ
极性 P-Channel
耗散功率 100 W
漏源极电压Vds 100 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids -16.5 A
上升时间 200 ns
输入电容Ciss 1100pF @25VVds
额定功率Max 100 W
下降时间 100 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 100W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99