FAIRCHILD SEMICONDUCTOR FDS4935A 双路场效应管, MOSFET, 双P沟道, -7 A, -30 V, 23 mohm, -10 V, -1.6 V
The is a dual P-channel PowerTrench® MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings 4.5V to 20V. It is suitable for load-switch and battery protection applications.
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- Fast switching speed
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±20V Gate to source voltage
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- -7A Continuous drain current
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- -30A Pulsed drain current
额定电压DC -30.0 V
额定电流 -7.00 A
额定功率 1.6 W
通道数 2
针脚数 8
漏源极电阻 23 mΩ
极性 P-Channel, Dual P-Channel
耗散功率 1.6 W
输入电容 1.23 nF
栅电荷 15.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 7.00 A
上升时间 10 ns
输入电容Ciss 1233pF @15VVds
额定功率Max 900 mW
下降时间 25 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 3.9 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS4935A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS9926A 飞兆/仙童 | 类似代替 | FDS4935A和FDS9926A的区别 |
IRF7313TRPBF 英飞凌 | 功能相似 | FDS4935A和IRF7313TRPBF的区别 |
IRF7314TRPBF 英飞凌 | 功能相似 | FDS4935A和IRF7314TRPBF的区别 |