FAIRCHILD SEMICONDUCTOR FQP19N20C. 晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
The is a 200V N-channel QFET® MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge typical 40.5nC
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- Low Crss typical 85pF
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- 100% Avalanche tested
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- ±30V Gate to source voltage
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- 62.5°C/W Thermal resistance, junction to ambient
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- 0.9°C/W Thermal resistance, junction to case
额定电压DC 200 V
额定电流 19.0 A
针脚数 3
漏源极电阻 140 mΩ
极性 N-Channel
耗散功率 139 W
阈值电压 4 V
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 19.0 A
上升时间 150 ns
输入电容Ciss 1080pF @25VVds
额定功率Max 139 W
下降时间 115 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 139 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQP19N20C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQP19N20C_F080 飞兆/仙童 | 类似代替 | FQP19N20C和FQP19N20C_F080的区别 |
STP55NF06 意法半导体 | 功能相似 | FQP19N20C和STP55NF06的区别 |
STP5NK100Z 意法半导体 | 功能相似 | FQP19N20C和STP5NK100Z的区别 |