FDMA3027PZ

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FDMA3027PZ概述

FAIRCHILD SEMICONDUCTOR  FDMA3027PZ  双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V

The is a dual P-channel PowerTrench® MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent P-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET 2x2 thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. G-S Zener has been added to enhance ESD voltage level and it is suitable for use with load switch and discrete gate driver applications.

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Low profile
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±25V Gate to source voltage
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-3.3A Continuous drain current
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-15A Pulsed drain current
FDMA3027PZ中文资料参数规格
技术参数

针脚数 6

漏源极电阻 0.069 Ω

极性 Dual P-Channel

耗散功率 1.4 W

漏源极电压Vds 30 V

连续漏极电流Ids 3.3A

上升时间 3 ns

输入电容Ciss 435pF @15VVds

额定功率Max 700 mW

下降时间 11 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 1.4 W

封装参数

安装方式 Surface Mount

引脚数 6

封装 MicroFET-6

外形尺寸

长度 2 mm

宽度 2 mm

高度 0.725 mm

封装 MicroFET-6

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

数据手册

在线购买FDMA3027PZ
型号: FDMA3027PZ
制造商: Fairchild 飞兆/仙童
描述:FAIRCHILD SEMICONDUCTOR  FDMA3027PZ  双路场效应管, MOSFET, 双P沟道, -3.3 A, -30 V, 0.069 ohm, -10 V, -1.9 V

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