FAIRCHILD SEMICONDUCTOR FDS8813NZ 晶体管, MOSFET, N沟道, 18.5 A, 30 V, 0.0038 ohm, 10 V, 1.8 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- 5.6kV Typical HBM ESD protection level
针脚数 8
漏源极电阻 0.0038 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 1.8 V
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
连续漏极电流Ids 18.5 A
输入电容Ciss 4145pF @15VVds
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS8813NZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRF8736TRPBF 英飞凌 | 功能相似 | FDS8813NZ和IRF8736TRPBF的区别 |
IRF8736PBF 英飞凌 | 功能相似 | FDS8813NZ和IRF8736PBF的区别 |