FAIRCHILD SEMICONDUCTOR FCD4N60TM 功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
The is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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- Ultra low gate charge Qg = 12.8nC
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- Low effective output capacitance Coss.eff = 32pF
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- 100% avalanche tested
额定电压DC 600 V
额定电流 3.90 A
通道数 1
针脚数 3
漏源极电阻 1 Ω
极性 N-Channel
耗散功率 50 W
阈值电压 5 V
输入电容 540 pF
栅电荷 16.6 nC
漏源极电压Vds 600 V
漏源击穿电压 600 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 3.90 A
上升时间 45 ns
输入电容Ciss 540pF @25VVds
额定功率Max 50 W
下降时间 30 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 50W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FCD4N60TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FCD4N60TF 飞兆/仙童 | 类似代替 | FCD4N60TM和FCD4N60TF的区别 |
IRLR024TRPBF 威世 | 功能相似 | FCD4N60TM和IRLR024TRPBF的区别 |