FAIRCHILD SEMICONDUCTOR FCU900N60Z 功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
Description
SuperFET®II is, ’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Features
• 675V @TJ = 150oC
• Max. RDSon = 900mΩ
• Ultra Low Gate Charge Typ. Qg = 13nC
• Low Effective Output Capacitance Typ. Coss.eff = 49pF
• 100% Avalanche Tested
• ESD Improved Capacity
针脚数 3
漏源极电阻 0.82 Ω
极性 N-Channel
耗散功率 52 W
阈值电压 2.5 V
漏源极电压Vds 600 V
连续漏极电流Ids 4.5A
上升时间 5.3 ns
输入电容Ciss 710pF @25VVds
额定功率Max 52 W
下降时间 11.9 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 52W Tc
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.8 mm
宽度 2.5 mm
高度 6.3 mm
封装 TO-251-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15