FAIRCHILD SEMICONDUCTOR FDS6898A. 双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
The is a dual N-channel logic level PWM optimized MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC 20.0 V
额定电流 9.40 A
针脚数 8
漏源极电阻 0.01 Ω
极性 N-Channel, Dual N-Channel
耗散功率 2 W
阈值电压 1 V
输入电容 1.82 nF
栅电荷 16.0 nC
漏源极电压Vds 20 V
漏源击穿电压 20.0 V
栅源击穿电压 ±12.0 V
连续漏极电流Ids 9.40 A
上升时间 15 ns
输入电容Ciss 1821pF @10VVds
额定功率Max 900 mW
下降时间 16 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6898A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS6898A_NF40 飞兆/仙童 | 类似代替 | FDS6898A和FDS6898A_NF40的区别 |
PHKD6N02LT,518 恩智浦 | 功能相似 | FDS6898A和PHKD6N02LT,518的区别 |