N沟道的PowerTrench SyncFET 30 V ， 42 A， 4MΩ N-Channel PowerTrench® SyncFET 30 V, 42 A, 4 mΩ
General Description
The has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest
rDSon while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Features
Max rDSon= 4.0 mΩ at VGS= 10 V, ID= 18 A
Max rDSon= 4.5 mΩ at VGS= 7 V, ID= 16 A
Advanced Package and Silicon combination for low rDSon and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
通道数 1
漏源极电阻 0.0032 Ω
极性 N-Channel
耗散功率 45 W
阈值电压 1.9 V
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 19A
上升时间 5 ns
输入电容Ciss 2820pF @15VVds
额定功率Max 2.5 W
下降时间 4 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 46W Tc
安装方式 Surface Mount
引脚数 8
封装 Power-56-8
长度 6 mm
宽度 5 mm
高度 1.05 mm
封装 Power-56-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDMS7672AS Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS8670 飞兆/仙童 | 功能相似 | FDMS7672AS和FDS8670的区别 |