FAIRCHILD SEMICONDUCTOR FDP55N06 晶体管, MOSFET, N沟道, 55 A, 60 V, 0.018 ohm, 10 V, 2 V
The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 100% Avalanche tested
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- 30nC Typical low gate charge
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- 60pF Typical low Crss
针脚数 3
漏源极电阻 0.018 Ω
极性 N-Channel
耗散功率 114 W
阈值电压 2 V
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 55.0 A
上升时间 130 ns
输入电容Ciss 1510pF @25VVds
额定功率Max 114 W
下降时间 95 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 114W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDP55N06 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP55NF06 意法半导体 | 功能相似 | FDP55N06和STP55NF06的区别 |
STP60NF06 意法半导体 | 功能相似 | FDP55N06和STP60NF06的区别 |
STP5NK100Z 意法半导体 | 功能相似 | FDP55N06和STP5NK100Z的区别 |