FAIRCHILD SEMICONDUCTOR FDS6975 双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V
The is a dual P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for notebook computer applications load switching, battery charging circuits and DC-to-DC conversion.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC -30.0 V
额定电流 -6.00 A
通道数 2
针脚数 8
漏源极电阻 0.025 Ω
极性 P-Channel, Dual P-Channel
耗散功率 2 W
输入电容 1.54 nF
栅电荷 14.5 nC
漏源极电压Vds 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids -6.00 A
上升时间 22 ns
输入电容Ciss 1540pF @15VVds
额定功率Max 900 mW
下降时间 18 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 3.9 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6975 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS9926A 飞兆/仙童 | 类似代替 | FDS6975和FDS9926A的区别 |
IRF7313TRPBF 英飞凌 | 功能相似 | FDS6975和IRF7313TRPBF的区别 |