FAIRCHILD SEMICONDUCTOR FDS6673BZ 晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V
The is a P-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- 6.5kV Typical HBM ESD protection level
针脚数 8
漏源极电阻 0.0065 Ω
极性 P-Channel
耗散功率 2.5 W
阈值电压 1.9 V
漏源极电压Vds 30 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 14.5 mA
上升时间 16 ns
输入电容Ciss 4700pF @15VVds
额定功率Max 1 W
下降时间 105 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS6673BZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS6679AZ 飞兆/仙童 | 类似代替 | FDS6673BZ和FDS6679AZ的区别 |
FDS6673AZ 飞兆/仙童 | 类似代替 | FDS6673BZ和FDS6673AZ的区别 |
IRF9321PBF 英飞凌 | 功能相似 | FDS6673BZ和IRF9321PBF的区别 |