FAIRCHILD SEMICONDUCTOR FQPF4N90C 功率场效应管, MOSFET, N沟道, 4 A, 900 V, 3.5 ohm, 10 V, 5 V
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
• 4A, 900V, RDSon = 4.2Ω @VGS = 10 V
• Low gate charge typical 17nC
• Low Crss typical 5.6 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 900 V
额定电流 4.00 A
针脚数 3
漏源极电阻 3.5 Ω
极性 N-Channel
耗散功率 47 W
阈值电压 5 V
漏源极电压Vds 900 V
漏源击穿电压 900 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 4.00 A
上升时间 50 ns
输入电容Ciss 960pF @25VVds
额定功率Max 47 W
下降时间 35 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 47W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.19 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQPF4N90C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQPF3N90 飞兆/仙童 | 类似代替 | FQPF4N90C和FQPF3N90的区别 |
STP3NK90ZFP 意法半导体 | 功能相似 | FQPF4N90C和STP3NK90ZFP的区别 |