FAIRCHILD SEMICONDUCTOR FDD86102LZ 晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level.
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- Very low Qg and Qgd compared to competing Trench technologies
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- Fast switching speed
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- 100% UIL tested
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- >6kV Typical HBM ESD protection level
针脚数 3
漏源极电阻 0.0178 Ω
极性 N-Channel
耗散功率 54 W
阈值电压 1.5 V
漏源极电压Vds 100 V
连续漏极电流Ids 8A
上升时间 2.3 ns
输入电容Ciss 1540pF @50VVds
额定功率Max 3.1 W
下降时间 2.3 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.1W Ta, 54W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD86102LZ Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IPD25CN10NGATMA1 英飞凌 | 功能相似 | FDD86102LZ和IPD25CN10NGATMA1的区别 |