400V N沟道MOSFET 400V N-Channel MOSFET
Description
This N-Channel enhancement mode power MOSFET is produced using Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC, and electronic lamp ballasts.
Features
• 10.5 A, 400 V, RDSon= 530 mΩMax. @ VGS= 10 V, ID= 5.25 A
• Low Gate Charge Typ. 28 nC
• Low Crss Typ. 85 pF
• 100% Avalanche Tested
额定电压DC 400 V
额定电流 10.5 A
通道数 1
漏源极电阻 530 mΩ
极性 N-Channel
耗散功率 44 W
漏源极电压Vds 400 V
漏源击穿电压 400 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 10.5 A
上升时间 89 ns
输入电容Ciss 1090pF @25VVds
额定功率Max 44 W
下降时间 81 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 44W Tc
安装方式 Through Hole
封装 TO-220-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQPF11N40C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRFS740B 飞兆/仙童 | 类似代替 | FQPF11N40C和IRFS740B的区别 |
FQPF11N40T 飞兆/仙童 | 类似代替 | FQPF11N40C和FQPF11N40T的区别 |
STP11NK40ZFP 意法半导体 | 功能相似 | FQPF11N40C和STP11NK40ZFP的区别 |