FAIRCHILD SEMICONDUCTOR FDMC6675BZ 晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0107 ohm, -10 V, -1.9 V
The is a P-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS ON and ESD protection. It is suitable for load switch and battery pack applications.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- 8kV Typical HBM ESD protection level
通道数 1
针脚数 8
漏源极电阻 0.0107 Ω
极性 P-Channel
耗散功率 36 W
漏源极电压Vds 30 V
漏源击穿电压 30 V
连续漏极电流Ids 9.5A
上升时间 10 ns
输入电容Ciss 2865pF @15VVds
额定功率Max 2.3 W
下降时间 26 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.3W Ta, 36W Tc
安装方式 Surface Mount
引脚数 8
封装 Power-33-8
长度 3.3 mm
宽度 3.3 mm
高度 0.75 mm
封装 Power-33-8
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15