FAIRCHILD SEMICONDUCTOR FDS5680 晶体管, MOSFET, N沟道, 8 A, 60 V, 20 mohm, 10 V, 2.5 V
The is a N-channel Logic Level MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
额定电压DC 60.0 V
额定电流 8.00 A
针脚数 8
漏源极电阻 0.02 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 2.5 V
输入电容 1.85 nF
栅电荷 30.0 nC
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 8.00 A
上升时间 8 ns
输入电容Ciss 1850pF @15VVds
额定功率Max 1 W
下降时间 32 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDS5680 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STS7NF60L 意法半导体 | 功能相似 | FDS5680和STS7NF60L的区别 |
FDS5690_NL 飞兆/仙童 | 功能相似 | FDS5680和FDS5690_NL的区别 |