FAIRCHILD SEMICONDUCTOR FDD5690 晶体管, MOSFET, N沟道, 9 A, 60 V, 23 mohm, 10 V, 2.5 V
The is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- 23nC Typical low gate charge
额定电压DC 60.0 V
额定电流 30.0 A
通道数 1
针脚数 3
漏源极电阻 0.023 Ω
极性 N-Channel
耗散功率 3.2 W
阈值电压 2.5 V
输入电容 1.11 nF
栅电荷 23.0 nC
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 9.00 A
上升时间 9 ns
输入电容Ciss 1110pF @25VVds
额定功率Max 1.3 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.2W Ta, 50W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDD5690 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
HUF76423D3S 飞兆/仙童 | 类似代替 | FDD5690和HUF76423D3S的区别 |
NTD32N06G 安森美 | 功能相似 | FDD5690和NTD32N06G的区别 |
NTD5413NT4G 安森美 | 功能相似 | FDD5690和NTD5413NT4G的区别 |