FAIRCHILD SEMICONDUCTOR FCP4N60 功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
The is a 600V N-channel SuperFET® MOSFET, high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. This product is general usage and suitable for many different applications.
通道数 1
针脚数 3
漏源极电阻 1 Ω
极性 N-Channel
耗散功率 50 W
阈值电压 5 V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 3.90 A
上升时间 45 ns
输入电容Ciss 540pF @25VVds
额定功率Max 50 W
下降时间 30 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 50W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 16.51 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99