FAIRCHILD SEMICONDUCTOR FDS8870 晶体管, MOSFET, N沟道, 18 A, 30 V, 4.2 mohm, 10 V, 2.5 V
The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
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- High performance Trench technology for extremely low RDS ON
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- Low gate charge
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- High power and current handling capability
额定电压DC 30.0 V
额定电流 18.0 A
针脚数 8
漏源极电阻 0.0042 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 2.5 V
输入电容 4.62 nF
栅电荷 85.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 18.0 A
上升时间 48 ns
输入电容Ciss 4615pF @15VVds
额定功率Max 2.5 W
下降时间 21 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS8870 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRF7832TRPBF 英飞凌 | 功能相似 | FDS8870和IRF7832TRPBF的区别 |
IRF7832PBF 英飞凌 | 功能相似 | FDS8870和IRF7832PBF的区别 |
IRF8788PBF 英飞凌 | 功能相似 | FDS8870和IRF8788PBF的区别 |