FAIRCHILD SEMICONDUCTOR FQP22N30 晶体管, MOSFET, N沟道, 21 A, 300 V, 160 mohm, 10 V, 5 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- 100% Avalanche tested
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- 47nC Typical low gate charge
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- 40pF Typical low Crss
额定电压DC 300 V
额定电流 21.0 A
针脚数 3
漏源极电阻 160 mΩ
极性 N-Channel
耗散功率 170 W
阈值电压 5 V
漏源极电压Vds 300 V
漏源击穿电压 300 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 21.0 A
上升时间 230 ns
输入电容Ciss 2200pF @25VVds
额定功率Max 170 W
下降时间 100 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 170W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99