FDS89141

FAIRCHILD SEMICONDUCTOR  FDS89141  双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V

The is a dual N-channel shielded gate MOSFET produced using advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for RDS ON, switching performance and ruggedness. The device is suitable for use with synchronous rectifier and primary switch for bridge topology applications.

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability in a widely used surface-mount package

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±20V Gate to source voltage

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3.5A Continuous drain current

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18A Pulsed drain current