FAIRCHILD SEMICONDUCTOR FDS3890 双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
The is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. This MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- ±20V Gate to source voltage
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- 4.7A Continuous drain current
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- 20A Pulsed drain current
额定电压DC 80.0 V
额定电流 4.70 A
通道数 2
针脚数 8
漏源极电阻 0.034 Ω
极性 Dual N-Channel
耗散功率 2 W
阈值电压 2.3 V
输入电容 1.18 nF
栅电荷 25.0 nC
漏源极电压Vds 80 V
漏源击穿电压 80 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 4.70 A
上升时间 8 ns
输入电容Ciss 1180pF @40VVds
额定功率Max 900 mW
下降时间 12 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 1.6 W
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS3890 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDS3890_NL 飞兆/仙童 | 功能相似 | FDS3890和FDS3890_NL的区别 |