FQPF9N50CF

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FQPF9N50CF概述

FAIRCHILD SEMICONDUCTOR  FQPF9N50CF  晶体管, MOSFET, N沟道, 9 A, 500 V, 0.7 ohm, 10 V, 4 V

The is a 500V N-channel QFET® enhancement mode Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.

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Low gate charge
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100% Avalanche tested
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Improved system reliability in PFC and soft switching topologies
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Switching loss improvements
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Lower conduction loss
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Fast recovery body diode
FQPF9N50CF中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.7 Ω

极性 N-Channel

耗散功率 44 W

阈值电压 4 V

漏源极电压Vds 500 V

漏源击穿电压 500 V

栅源击穿电压 ±30.0 V

连续漏极电流Ids 9.00 A

上升时间 65 ns

输入电容Ciss 1030pF @25VVds

额定功率Max 44 W

下降时间 64 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 44W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.36 mm

宽度 4.9 mm

高度 16.07 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/06/15

海关信息

ECCN代码 EAR99

数据手册

在线购买FQPF9N50CF
型号: FQPF9N50CF
制造商: Fairchild 飞兆/仙童
描述:FAIRCHILD SEMICONDUCTOR  FQPF9N50CF  晶体管, MOSFET, N沟道, 9 A, 500 V, 0.7 ohm, 10 V, 4 V
替代型号FQPF9N50CF
型号/品牌 代替类型 替代型号对比

FQPF9N50CF

Fairchild 飞兆/仙童

当前型号

当前型号

IRF730APBF

威世

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