FAIRCHILD SEMICONDUCTOR FQPF9N50CF 晶体管, MOSFET, N沟道, 9 A, 500 V, 0.7 ohm, 10 V, 4 V
The is a 500V N-channel QFET® enhancement mode Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
针脚数 3
漏源极电阻 0.7 Ω
极性 N-Channel
耗散功率 44 W
阈值电压 4 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 9.00 A
上升时间 65 ns
输入电容Ciss 1030pF @25VVds
额定功率Max 44 W
下降时间 64 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 44W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FQPF9N50CF Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRF730APBF 威世 | 功能相似 | FQPF9N50CF和IRF730APBF的区别 |
STF10NK50Z 意法半导体 | 功能相似 | FQPF9N50CF和STF10NK50Z的区别 |