FAIRCHILD SEMICONDUCTOR FDPF39N20 晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V
The is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 100% Avalanche tested
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- 38nC Typical low gate charge
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- 57pF Typical low Crss
额定功率 37 W
针脚数 3
漏源极电阻 66 mΩ
极性 N-Channel
耗散功率 37 W
阈值电压 5 V
输入电容 2.13 nF
栅电荷 49.0 nC
漏源极电压Vds 200 V
漏源击穿电压 200 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 39.0 A
上升时间 160 ns
输入电容Ciss 2130pF @25VVds
额定功率Max 37 W
下降时间 150 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 37W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDPF39N20 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRFI3205PBF 国际整流器 | 功能相似 | FDPF39N20和IRFI3205PBF的区别 |