FAIRCHILD SEMICONDUCTOR FDD86250 晶体管, MOSFET, N沟道, 50 A, 150 V, 0.0184 ohm, 10 V, 2.9 V
The is a 150V N-channel shielded gate PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. "s the latest medium voltage power MOSFET is optimized power switches combining small gate charge QG, small reverse recovery charge Qrr and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM figure of merit QGxRDSON of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
通道数 1
针脚数 3
漏源极电阻 0.0184 Ω
极性 N-Channel
耗散功率 132 W
阈值电压 2.9 V
漏源极电压Vds 150 V
连续漏极电流Ids 8A
输入电容Ciss 2110pF @75VVds
额定功率Max 3.1 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 3.1W Ta, 132W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDD86250 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IPD200N15N3GATMA1 英飞凌 | 功能相似 | FDD86250和IPD200N15N3GATMA1的区别 |