FAIRCHILD SEMICONDUCTOR FQPF6N90C 功率场效应管, MOSFET, N沟道, 6 A, 900 V, 1.93 ohm, 10 V, 5 V
The is a N-channel QFET® enhancement-mode power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
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- Low gate charge 30nC
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- Low Crss 11pF
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- 100% avalanche tested
通道数 1
针脚数 3
漏源极电阻 1.93 Ω
极性 N-Channel
耗散功率 56 W
阈值电压 5 V
漏源极电压Vds 900 V
漏源击穿电压 900 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 6.00 A
上升时间 90 ns
输入电容Ciss 1770pF @25VVds
额定功率Max 56 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 56W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.19 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQPF6N90C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP6NK90ZFP 意法半导体 | 功能相似 | FQPF6N90C和STP6NK90ZFP的区别 |
FQAF5N90 飞兆/仙童 | 功能相似 | FQPF6N90C和FQAF5N90的区别 |