FAIRCHILD SEMICONDUCTOR FDS5670 晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies and DC-to-DC power supply designs with higher overall efficiency.
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- Low gate charge
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- Fast switching speed
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC 60.0 V
额定电流 10.0 A
针脚数 8
漏源极电阻 0.014 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 2.4 V
输入电容 2.90 nF
栅电荷 49.0 nC
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 10.0 A
上升时间 10 ns
输入电容Ciss 2900pF @15VVds
额定功率Max 1 W
下降时间 23 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS5670 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
IRF7855PBF 英飞凌 | 功能相似 | FDS5670和IRF7855PBF的区别 |
FDS5672 安森美 | 功能相似 | FDS5670和FDS5672的区别 |