Trans MOSFET N-CH 500V 13A 3Pin3+Tab I2PAK Rail
Description
This N-Channel enhancement mode power MOSFET is produced using Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,
active power factor correction PFC, and electronic lamp ballasts.
Features
• 13 A, 500 V, RDSon= 480 mΩMax. @VGS= 10 V, ID= 6.5 A
• Low Gate Charge Typ. 43 nC
• Low Crss Typ. 20 pF
• 100% Avalanche Tested
• RoHS Compliant
额定电压DC 500 V
额定电流 13.0 A
漏源极电阻 390 mΩ
极性 N-Channel
耗散功率 195 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 13.0 A
上升时间 100 ns
输入电容Ciss 2055pF @25VVds
额定功率Max 195 W
下降时间 100 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 195W Tc
安装方式 Through Hole
封装 TO-262-3
封装 TO-262-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99