PowerTrench® N 通道 MOSFET，高达 9.9A，Fairchild Semiconductor### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDSON
specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies, and DC/DC power supply designs with higher overall efficiency.
Features
• 7.6 A, 80 V. RDSON= 0.027 Ω @ VGS= 10 V
RDSON= 0.031 Ω @ VGS= 6 V.
• Low gate charge 34nC typical.
• Fast switching speed.
• High performance trench technology for extremely low RDSON.
• High power and current handling capability.
额定电压DC 80.0 V
额定电流 7.60 A
通道数 1
漏源极电阻 22 mΩ
极性 N-Channel
耗散功率 2.5 W
输入电容 1.80 nF
栅电荷 34.0 nC
漏源极电压Vds 80 V
漏源击穿电压 80 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 7.60 A
上升时间 8 ns
输入电容Ciss 1800pF @25VVds
额定功率Max 1 W
下降时间 16 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS3580 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
NTMS4503NR2G 安森美 | 功能相似 | FDS3580和NTMS4503NR2G的区别 |
NTMS4503NR2 安森美 | 功能相似 | FDS3580和NTMS4503NR2的区别 |