FAIRCHILD SEMICONDUCTOR FQA28N15 晶体管, MOSFET, N沟道, 33 A, 150 V, 0.067 ohm, 10 V, 4 V
The is a 150V N-channel QFET® enhancement mode Power MOSFET is produced using "s proprietary, planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
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- Low gate charge
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- 100% Avalanche tested
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- 175°C Rated junction temperature
额定电压DC 150 V
额定电流 33.0 A
针脚数 3
漏源极电阻 0.067 Ω
极性 N-Channel
耗散功率 227 W
阈值电压 4 V
漏源极电压Vds 150 V
漏源击穿电压 150 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 33.0 A
上升时间 180 ns
输入电容Ciss 1600pF @25VVds
额定功率Max 227 W
下降时间 115 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 227W Tc
安装方式 Through Hole
引脚数 3
封装 TO-3-3
长度 15.8 mm
宽度 5 mm
高度 20.1 mm
封装 TO-3-3
工作温度 -55℃ ~ 175℃
产品生命周期 Active
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQA28N15 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQA28N15_F109 飞兆/仙童 | 类似代替 | FQA28N15和FQA28N15_F109的区别 |
IRFP4232PBF 国际整流器 | 功能相似 | FQA28N15和IRFP4232PBF的区别 |