FAIRCHILD SEMICONDUCTOR FDS4470 晶体管, MOSFET, N沟道, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V
The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
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- 45nC Low gate charge
额定电压DC 40.0 V
额定电流 12.5 A
针脚数 8
漏源极电阻 0.006 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 3.9 V
输入电容 2.66 nF
栅电荷 45.0 nC
漏源极电压Vds 40 V
漏源击穿电压 -100 V
连续漏极电流Ids 12.5 A
上升时间 12 ns
输入电容Ciss 2659pF @20VVds
额定功率Max 1.2 W
下降时间 29 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 5 mm
宽度 4 mm
高度 1.5 mm
封装 SOIC-8
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS4470 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
AO4484 万代半导体 | 功能相似 | FDS4470和AO4484的区别 |
SI4840BDY-T1-GE3 威世 | 功能相似 | FDS4470和SI4840BDY-T1-GE3的区别 |