FAIRCHILD SEMICONDUCTOR FQB55N10TM 晶体管, MOSFET, N沟道, 55 A, 100 V, 0.021 ohm, 10 V, 4 V
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
• 55A, 100V, RDSon = 0.026Ω @VGS = 10 V
• Low gate charge typical 75 nC
• Low Crss typical 130 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• RoHS Compliant
额定电压DC 100 V
额定电流 55.0 A
通道数 1
针脚数 3
漏源极电阻 0.021 Ω
极性 N-Channel
耗散功率 3.75 W
阈值电压 4 V
输入电容 2.10 nF
栅电荷 75.0 nC
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 55.0 mA
上升时间 250 ns
输入电容Ciss 2730pF @25VVds
额定功率Max 3.75 W
下降时间 140 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3.75W Ta, 155W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQB55N10TM Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STB80NF10T4 意法半导体 | 功能相似 | FQB55N10TM和STB80NF10T4的区别 |
STB40NF10LT4 意法半导体 | 功能相似 | FQB55N10TM和STB40NF10LT4的区别 |
STB40NF10T4 意法半导体 | 功能相似 | FQB55N10TM和STB40NF10T4的区别 |