30V N沟道的PowerTrench SyncFET 30V N-Channel PowerTrench SyncFET
General Description
The is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDSON and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.
Features
• 76 A, 30 V RDSONmax= 8.0 mΩ@ VGS= 10 V
RDSONmax= 10.4 mΩ@ VGS= 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge 29nC typical
• High performance trench technology for extremely low RDSON
• High power and current handling capability
.
Applications
• DC/DC converter
• Low side notebook
额定电压DC 30.0 V
额定电流 76.0 A
极性 N-Channel
耗散功率 70W Ta
输入电容 1.58 nF
栅电荷 29.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
连续漏极电流Ids 76.0 A
上升时间 12.0 ns
输入电容Ciss 1580pF @15VVds
额定功率Max 1.3 W
耗散功率Max 70W Ta
安装方式 Surface Mount
封装 TO-252-3
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FDD6670AS Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDD6670S 飞兆/仙童 | 类似代替 | FDD6670AS和FDD6670S的区别 |