FAIRCHILD SEMICONDUCTOR FDP33N25 晶体管, MOSFET, N沟道, 33 A, 250 V, 94 mohm, 10 V, 5 V
The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- 100% Avalanche tested
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- 36.8nC Typical low gate charge
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- 39pF Typical low Crss
额定电压DC 250 V
额定电流 33.0 A
针脚数 3
漏源极电阻 0.094 Ω
极性 N-Channel
耗散功率 235 W
阈值电压 5 V
输入电容 2.13 nF
栅电荷 48.0 nC
漏源极电压Vds 250 V
漏源击穿电压 250 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 33.0 A
上升时间 230 ns
输入电容Ciss 2135pF @25VVds
额定功率Max 235 W
下降时间 120 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 235W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDP33N25 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP50NF25 意法半导体 | 功能相似 | FDP33N25和STP50NF25的区别 |
STP52N25M5 意法半导体 | 功能相似 | FDP33N25和STP52N25M5的区别 |