30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
Features
· 84 A, 30 V. RDSON = 5 mW @ VGS = 10 V
RDSON = 6 mW @ VGS = 4.5 V
· Low gate charge
· Fast switching
· High performance trench technology for extremely low RDSON
Applications
· DC/DC converter
· Motor Drives
额定电压DC 30.0 V
额定电流 84.0 A
通道数 1
漏源极电阻 4 mΩ
极性 N-Channel
耗散功率 83 W
输入电容 3.84 nF
栅电荷 37.0 nC
漏源极电压Vds 30 V
漏源击穿电压 30 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 84.0 A
上升时间 13 ns
输入电容Ciss 3845pF @15VVds
额定功率Max 1.6 W
下降时间 36 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 83W Ta
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99