FAIRCHILD SEMICONDUCTOR FDP75N08A 晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
The is an UniFET™ N-channel High Voltage MOSFET produced based on Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC, flat panel display FPD TV power, ATX and electronic lamp ballasts.
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- Fast switching
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- Improved dV/dt capability
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- 145nC Typical low gate charge
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- 86pF Typical low Crss
额定电压DC 75.0 V
额定电流 75.0 A
通道数 1
针脚数 3
漏源极电阻 11 mΩ
极性 N-Channel
耗散功率 137 W
阈值电压 4 V
输入电容 4.47 nF
栅电荷 104 nC
漏源极电压Vds 75 V
漏源击穿电压 75 V
连续漏极电流Ids 75.0 A
上升时间 212 ns
输入电容Ciss 4468pF @25VVds
额定功率Max 137 W
下降时间 147 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 137W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDP75N08A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDP75N08 飞兆/仙童 | 类似代替 | FDP75N08A和FDP75N08的区别 |
IRF2807ZPBF 英飞凌 | 功能相似 | FDP75N08A和IRF2807ZPBF的区别 |
STP75NF75 意法半导体 | 功能相似 | FDP75N08A和STP75NF75的区别 |