FAIRCHILD SEMICONDUCTOR FQPF8N80C 功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
The is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
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- Low gate charge
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- 100% Avalanche tested
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- Improved system reliability in PFC and soft switching topologies
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- Switching loss improvements
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- Lower conduction loss
额定电压DC 800 V
额定电流 8.00 A
针脚数 3
漏源极电阻 1.29 Ω
极性 N-Channel
耗散功率 59 W
阈值电压 5 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 8.00 A
上升时间 110 ns
输入电容Ciss 2050pF @25VVds
额定功率Max 59 W
下降时间 70 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 59W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.16 mm
宽度 4.7 mm
高度 9.19 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
香港进出口证 NLR
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQPF8N80C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQPF8N80CYDTU 飞兆/仙童 | 类似代替 | FQPF8N80C和FQPF8N80CYDTU的区别 |
STP7NK80ZFP 意法半导体 | 功能相似 | FQPF8N80C和STP7NK80ZFP的区别 |
STP8NK80ZFP 意法半导体 | 功能相似 | FQPF8N80C和STP8NK80ZFP的区别 |