FAIRCHILD SEMICONDUCTOR FDP8870. 场效应管, MOSFET, N沟道
The is a N-channel MOSFET produced using Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
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- Low gate charge
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability
额定电压DC 30.0 V
额定电流 160 A
针脚数 3
漏源极电阻 0.0034 Ω
极性 N-Channel
耗散功率 160 W
阈值电压 2.5 V
输入电容 5.20 nF
栅电荷 106 nC
漏源极电压Vds 30 V
漏源击穿电压 30.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 156 A
上升时间 105 ns
输入电容Ciss 5200pF @15VVds
额定功率Max 160 W
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 160W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.83 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDP8870 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FDP8870_F085 飞兆/仙童 | 类似代替 | FDP8870和FDP8870_F085的区别 |
IPP042N03LGXKSA1 英飞凌 | 功能相似 | FDP8870和IPP042N03LGXKSA1的区别 |
STP80NF03L-04 意法半导体 | 功能相似 | FDP8870和STP80NF03L-04的区别 |