FAIRCHILD SEMICONDUCTOR FQPF13N50CF 晶体管, MOSFET, N沟道, 13 A, 500 V, 0.43 ohm, 10 V, 4 V
The is a QFET® FRFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction PFC and electronic lamp ballasts.
额定电压DC 500 V
额定电流 13.0 A
通道数 1
针脚数 3
漏源极电阻 0.43 Ω
极性 N-Channel
耗散功率 48 W
阈值电压 4 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 13.0 A
上升时间 100 ns
输入电容Ciss 2055pF @25VVds
额定功率Max 48 W
下降时间 100 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 48W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
宽度 4.7 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 Non-Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99