500V N沟道MOSFET 500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 13A, 500V, RDSon= 0.48Ω@VGS= 10 V
• Low gate charge typical 43 nC
• Low Crss typical 20pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 500 V
额定电流 13.0 A
漏源极电阻 480 mΩ
极性 N-Channel
耗散功率 195 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 13.0 A
上升时间 100 ns
输入电容Ciss 2055pF @25VVds
额定功率Max 195 W
下降时间 100 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 195W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQP13N50C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP60NF06 意法半导体 | 功能相似 | FQP13N50C和STP60NF06的区别 |
STP5NK100Z 意法半导体 | 功能相似 | FQP13N50C和STP5NK100Z的区别 |
STP60NF06L 意法半导体 | 功能相似 | FQP13N50C和STP60NF06L的区别 |