Trans MOSFET N-CH 800V 8A 3Pin3+Tab TO-220F Tube
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
• 8A, 800V, RDSon= 1.55Ω@VGS= 10 V
• Low gate charge typical 35 nC
• Low Crss typical 13 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
额定电压DC 800 V
额定电流 8.00 A
通道数 1
漏源极电阻 1.55 Ω
极性 N-CH
耗散功率 59 W
漏源极电压Vds 800 V
漏源击穿电压 800 V
连续漏极电流Ids 8.00 A
上升时间 110 ns
输入电容Ciss 2050pF @25VVds
额定功率Max 59 W
下降时间 70 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 59W Tc
安装方式 Through Hole
封装 TO-220-3
长度 10.67 mm
宽度 4.7 mm
高度 16.3 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FQPF8N80CYDTU Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
FQPF8N80C 飞兆/仙童 | 类似代替 | FQPF8N80CYDTU和FQPF8N80C的区别 |
STP7NK80ZFP 意法半导体 | 功能相似 | FQPF8N80CYDTU和STP7NK80ZFP的区别 |