FAIRCHILD SEMICONDUCTOR FDS86240 晶体管, MOSFET, N沟道, 7.5 A, 150 V, 0.0173 ohm, 10 V, 2.7 V
The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been optimized for RDS ON, switching performance and ruggedness. It is suitable for DC-to-DC converters, off-line UPS and high voltage synchronous rectifier applications.
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- High performance Trench technology for extremely low RDS ON
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- High power and current handling capability in a widely used surface-mount package
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- 100% UIL tested
针脚数 8
漏源极电阻 0.0173 Ω
极性 N-Channel
耗散功率 5 W
阈值电压 2.7 V
漏源极电压Vds 150 V
连续漏极电流Ids 7.5A
上升时间 10 ns
输入电容Ciss 2570pF @75VVds
额定功率Max 2.5 W
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta, 5W Tc
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
长度 4.9 mm
宽度 3.9 mm
高度 1.575 mm
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FDS86240 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |