500V N沟道MOSFET 500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
• 13A, 500V, RDSon= 0.48Ω@VGS= 10 V
• Low gate charge typical 43 nC
• Low Crss typical 20pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 500 V
额定电流 13.0 A
漏源极电阻 480 mΩ
极性 N-Channel
耗散功率 48 W
漏源极电压Vds 500 V
漏源击穿电压 500 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 13.0 A
上升时间 100 ns
输入电容Ciss 2055pF @25VVds
额定功率Max 48 W
下降时间 100 ns
耗散功率Max 48W Tc
安装方式 Through Hole
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Rail, Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
香港进出口证 NLR
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
FQPF13N50C Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
STP11NK50ZFP 意法半导体 | 功能相似 | FQPF13N50C和STP11NK50ZFP的区别 |