FAIRCHILD SEMICONDUCTOR FQP70N10 晶体管, MOSFET, N沟道, 57 A, 100 V, 23 mohm, 10 V, 4 V
The is a QFET® N-channel enhancement-mode Power MOSFET produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
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- 100% Avalanche tested
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- 85nC Typical low gate charge
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- 150pF Typical low Crss
额定电压DC 100 V
额定电流 57.0 A
针脚数 3
漏源极电阻 23 mΩ
极性 N-Channel
耗散功率 160 W
阈值电压 4 V
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±25.0 V
连续漏极电流Ids 57.0 A
上升时间 470 ns
输入电容Ciss 3300pF @25VVds
额定功率Max 160 W
下降时间 160 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 160 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.1 mm
宽度 4.7 mm
高度 9.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
FQP70N10 Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
HUF75345P3 飞兆/仙童 | 类似代替 | FQP70N10和HUF75345P3的区别 |
HUF75339P3 飞兆/仙童 | 类似代替 | FQP70N10和HUF75339P3的区别 |
HUF75344P3 飞兆/仙童 | 类似代替 | FQP70N10和HUF75344P3的区别 |