150V N沟道MOSFET 150V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rdson is required.
Features
• 45A, 150V, RDSon = 0.04Ω @VGS = 10 V
• Low gate charge typical 72 nC
• Low Crss typical 135 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
额定电压DC 150 V
额定电流 45.0 A
漏源极电阻 40.0 mΩ
极性 N-Channel
耗散功率 66 W
漏源极电压Vds 150 V
漏源击穿电压 150 V
栅源击穿电压 ±30.0 V
连续漏极电流Ids 45.0 A
上升时间 232 ns
输入电容Ciss 3030pF @25VVds
额定功率Max 66 W
下降时间 246 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 66W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.36 mm
宽度 4.9 mm
高度 16.07 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99